LASER-BEAM SHAPING SYSTEM FOR SEMICONDUCTOR PROCESSING

A high throughput beam shaping system was developed. An input 308 nm XeCl-excimer laser beam was split into two beams by a mirror with a reflectivity of 33%. The left and right halves of the beam, which passed through the mirror, were exchanged to opposite sides of the beam axis and then collimated by a pair of prisms. The beam with the original and the modified intensity distributions were then superposed at the mirror. With this procedure, the resulting output beam was made uniform and collimated.