THERMAL-STABILITY IN AL/TI/GAAS SCHOTTKY-BARRIER

被引：0
|
作者：
HARA, T [1 ]
ZHU, JY [1 ]
MOCHIZUKI, A [1 ]
ASAI, S [1 ]
HIGASHISAKA, A [1 ]
KOHZU, H [1 ]
机构：
[1] NEC CORP LTD,USLI DEVICE DEV LABS,OTSU,SHIGA 512,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7A期
关键词：
GALLIUM ARSENIDE; SCHOTTKY BARRIER; MESFET; THERMAL STABILITY; BARRIER LAYER;
D O I：
10.1143/JJAP.34.L800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interfacial reaction occurs at the Al/Ti interface in the Al/Ti/GaAs Schottky barrier at low temperatures. Therefore, the barrier layer is required between Al and Ti layers to manufacture thermally stable Al/Ti/GaAs Schottky gates in metal semiconductor field effect transistors (MESFET's). In this study, a double layer of Ti2Ga3 and TiAs is formed by interfacial reaction at the Ti (30 nm thick)/GaAs interface at 450 degrees C. In the double layer, Ti2Ga3 is employed as the barrier layer for Al and the TiAs layer as the Schottky electrode with high barrier height. Interfacial reaction does not occur at the Al/Ti2Ga3 interface with annealing at 450 degrees C and a thermally stable Al/Ti2Ga3/TiAs/GaAs Schottky gate can be obtained by employing the Ti2Ga3 barrier layer formed by this interfacial reaction. Moreover, barrier height can be increased by 0.12 eV in the TiAs/GaAs Schottky gate from that of the Ti/GaAs gate. We describe the barrier effect of the Ti2Ga3 layer for Al.
引用
收藏
页码：L800 / L802
页数：3
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