NO(X) RESPONSE OF TIN DIOXIDE-BASED GAS SENSORS

被引:32
|
作者
WILLIAMS, G
COLES, GSV
机构
[1] Department of Electrical and Electronic Engineering, University of Wales, Swansea, SA2 8PP, Singleton Park
关键词
D O I
10.1016/0925-4005(93)85208-R
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Three types of SnO2 based sensors developed at Swansea have been tested in NO(x) containing environments. Polycrystalline Bi2O3 doped devices exhibit a reverse sensitivity to NO(x) both in air and in nitrogen at temperatures of 300-degrees-C or less. In this case sensor resistance falls markedly upon exposure to the oxidising gas. In contrast, sensors prepared from undoped SnO2 which had been precalcined at 1500-degrees-C behave in a conventional manner, where marked resistance increases are observed in the presence of NO(x). Gas sensitive thin films fabricated via the oxidation of a metallic Sn layer display high sensitivity to NO(x) while remaining unresponsive to common interfering gases such as carbon monoxide or methane.
引用
收藏
页码:349 / 353
页数:5
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