OXIDATION OF TIN THIN-FILMS IN AN ION-BEAM-ASSISTED DEPOSITION PROCESS

被引：3
|
作者：
KUBOTA, H
NAGATA, M
MIYAGAWA, R
NICOLET, MA
机构：
[1] KUMAMOTO IND RES INST,KUMAMOTO 862,JAPAN
[2] CALTECH,PASADENA,CA 91125
来源：
APPLIED SURFACE SCIENCE | 1994年 / 82-3卷
关键词：
D O I：
10.1016/0169-4332(94)90276-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Surface vacancies stimulated by ions play a major role in the oxidation of TiN thin films deposited by a sequential ion-beam-assisted process. A possibility of substitution of N atoms just below the Ti vacant sites at the growing surface is suggested. A method for reducing the oxygen contamination by adjusting both the beam voltage and the current in the ion-assisting techniques is also presented.
引用
收藏
页码：565 / 568
页数：4
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