DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALING

被引：11
|
作者：
SHENG, NH
MIZUTA, M
MERZ, JL
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期
关键词：
D O I：
10.1063/1.92928
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：68 / 70
页数：3
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