CO2-LASER CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON - GAS-PHASE PROCESSES AND THIN-FILM PROPERTIES

被引：3

作者：

GOLUSDA, E ^{[1
]}

LUHMANN, KD ^{[1
]}

MOLLEKOPF, G ^{[1
]}

STAFAST, H ^{[1
]}

WACKER, M ^{[1
]}

机构：

[1] BATTELLE EUROPE,ROMERHOF 35,W-6000 FRANKFURT 90,GERMANY

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1991年 / 95卷 / 11期

关键词：

ELECTRICAL PROPERTIES; PHOTOCHEMISTRY; SEMICONDUCTORS;

D O I：

10.1002/bbpc.19910951118

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CW CO2 laser CVD of a-Si:H was performed in a parallel configuration of the substrate and a horizontal CO2 laser beam. During deposition in situ gas analysis was performed by sampling through an orifice in the substrate surface (T(s) = 400-degrees-C) using a molecular beam and mass spectrometry. Time resolved measurements revealed a start-up period of several minutes. Its influence onto the a-Si:H film quality was investigated with respect to the dark and photo conductivities, optical band gap, fermi level, hydrogen bonding in SiH and SiH2 groups, density of defects in the mobility gap, and Urbach energy.

引用

页码：1414 / 1416

页数：3

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