BORON DOPING FOR SI MOLECULAR-BEAM EPITAXY USING HBO2

被引：0
|
作者：
TATSUMI, T [1 ]
HIRAYAMA, H [1 ]
AIZAKI, N [1 ]
机构：
[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C546 / C546
页数：1
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