Stoichiometric growth of polycrystalline C3N4 thin films

Polycrystalline carbon nitride films were synthesized using the rf diode sputtering technique. The carbon nitride films were evaluated with IR spectroscopy, X-ray diffraction and Auger electron spectroscopy. The more important findings are that polycrystalline C3N4 films could be deposited on single-crystal Si(111) wafers at ambient temperatures during deposition and the nitrogen-carbon concentration ratios chi = [N]/[C] attained the stoichiometric value 1.33 required for the C3N4 structure in the films.