RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY OF SELENIUM IMPLANTED INP

被引:12
|
作者
GILL, SS
SEALY, BJ
STEPHENS, KG
机构
关键词
D O I
10.1088/0022-3727/14/10/024
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1915 / 1922
页数:8
相关论文
共 50 条
  • [41] Rutherford backscattering studies of solid phase recrystallization and incorporation in erbium-implanted silicon
    Li, Dai-qing
    Ren, Ting-qi
    Gong, Bao-an
    Zhang, Bei
    Chen, Kong-jun
    Zhu, Pei-ran
    Xu, Tian-bing
    Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B30 (01):
  • [42] RUTHERFORD BACKSCATTERING AND SECONDARY ION MASS-SPECTROMETRY STUDIES OF ERBIUM IMPLANTED SILICON
    GILLIN, WP
    ZHANG, JP
    SEALY, BJ
    SOLID STATE COMMUNICATIONS, 1991, 77 (12) : 907 - 910
  • [43] RUTHERFORD BACKSCATTERING MEASUREMENTS OF DOPANT CONCENTRATION IN CD-IMPLANTED GALLIUM-ARSENIDE
    INADA, T
    TAKAHASHI, T
    SAWADA, M
    KITAHARA, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 438 - 442
  • [44] Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
    Anwand, W
    Brauer, G
    Coleman, PG
    Voelskow, M
    Skorupa, W
    APPLIED SURFACE SCIENCE, 1999, 149 (1-4) : 148 - 150
  • [45] Characterization of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
    Anwand, W.
    Brauer, G.
    Coleman, P.G.
    Voelskow, M.
    Skorupa, W.
    Applied Surface Science, 1999, 149 (01): : 148 - 150
  • [46] Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon
    Mohapatra, S
    Mahapatra, DP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (1-2): : 249 - 254
  • [47] RUTHERFORD BACKSCATTERING SPECTROSCOPY (RBS)
    GROB, JJ
    SIFFERT, P
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1984, 8 (1-2): : 59 - 106
  • [48] OXIDATION OF INDIUM IMPLANTED ALUMINUM STUDIED BY THE RUTHERFORD BACKSCATTERING AND PERTURBED ANGULAR-CORRELATION METHODS
    KESTEN, J
    WODNIECKI, P
    UHRMACHER, M
    LIEB, KP
    HYPERFINE INTERACTIONS, 1988, 39 (02): : 129 - 145
  • [49] Manganese depth-concentration profiles in ion-implanted silicon studied by rutherford backscattering
    Égamberdiev, BÉ
    Adylov, MY
    TECHNICAL PHYSICS LETTERS, 2001, 27 (02) : 168 - 170
  • [50] RUTHERFORD BACKSCATTERING STUDIES OF SOLID-PHASE RECRYSTALLIZATION AND INCORPORATION IN ERBIUM-IMPLANTED SILICON
    LI, DQ
    REN, TQ
    GONG, BA
    ZHANG, B
    CHEN, KJ
    ZHU, PR
    XU, TB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (01): : L1 - L4