ANOMALOUS BEHAVIOR OF N-CHANNEL MOS-TRANSISTOR CHARACTERISTICS IN THE TEMPERATURE-RANGE 4.2-14K

被引：8
|
作者：
ROCOFYLLOU, E
NASSIOPOULOS, AG
TSAMAKIS, D
BALESTRA, F
机构：
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 08期
关键词：
D O I：
10.1016/0038-1101(89)90137-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：603 / 605
页数：3
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