Self-organization in irradiated semiconductor crystals caused by thermal annealing

被引：0

作者：

Zavada, M. ^{[1
]}

Konoreva, O. ^{[1
]}

Lytovchenko, P. ^{[1
]}

Opilat, V ^{[2
]}

Pinkovska, M. ^{[1
]}

Radkevych, O. ^{[3
]}

Tartachnyk, V ^{[1
]}

机构：

[1] NAS Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] Taras Shevchenko Natl Univ Kyiv, 64-13 Volodymyrska Str, UA-01601 Kiev, Ukraine

[3] NAS Ukraine, SE SRI Microdevices STC Inst Single Cristals, 3 Pivnichno Syretska Str, UA-04136 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2018年 / 21卷 / 02期

关键词：

gallium phosphate; defects; electron irradiation; self-organization; annealing;

D O I：

10.15407/spqeo21.02.130

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Annealing of complex semiconductors GaP and CdP2, irradiated at room temperature by high fluences of electrons within 1...30 MeV energy interval and 80 MeV alpha-particles, was carried out, and main electrical parameters (conductivity sigma, carrier concentration n and mobility mu) as well as the positron lifetime tau were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.

引用

页码：130 / 133

页数：4

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