ELECTROSTRICTIVE EFFECT OF HOT-ELECTRONS

被引：0

作者：

FOMIN, NV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1201 / 1202

页数：2

共 50 条

[1] EFFECT OF HOT-ELECTRONS ON THE POLAR WIND
BARAKAT, AR
SCHUNK, RW
[J]. JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 1984, 89 (NA11): : 9771 - 9783
[2] ENERGY RELAXATION EFFECT OF HOT-ELECTRONS IN GAAS
ASHIDA, K
INOUE, M
SHIRAFUJI, J
INUISHI, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (02) : 408 - 414
[3] THE ODD VOIGT EFFECT ON HOT-ELECTRONS IN SEMICONDUCTORS
EPSHTEIN, EM
[J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (05): : 295 - 297
[4] HALL-EFFECT OF HOT-ELECTRONS IN SILICON
KRIECHBAUM, M
WAJDA, J
HEINRICH, H
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (04) : 829 - +
[5] HOT-ELECTRONS IN HETEROLAYERS
PRICE, PJ
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2236 - 2237
[6] TRAPPING OF HOT-ELECTRONS
WOLTERS, DR
ZEGERSVANDUYNHOVEN, ATA
[J]. APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 565 - 577
[7] HOT-ELECTRONS IN INSULATORS
BOTTGER, O
[J]. NATURWISSENSCHAFTEN, 1972, 59 (07) : 311 - &
[8] RECOMBINATION OF HOT-ELECTRONS
VANWELZENIS, RG
ZEEUWEN, JP
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1591 - 1595
[9] HOT-ELECTRONS IN SEMICONDUCTORS
RIDLEY, BK
[J]. SCIENCE PROGRESS, 1986, 70 (279) : 425 - 459
[10] RECOMBINATION OF HOT-ELECTRONS IN SEMICONDUCTORS AND FARADAY-EFFECT
ASRATYAN, KK
KACHLISH.ZS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1081 - 1082