RECOMBINATION OF HOT-ELECTRONS IN SEMICONDUCTORS AND FARADAY-EFFECT

被引：0
|
作者：
ASRATYAN, KK
KACHLISH.ZS
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1081 / 1082
页数：2
相关论文
共 50 条
  • [1] FARADAY-EFFECT OF HOT-ELECTRONS IN DEGENERATE TYPE INSB IN INFRARED (II)
    VOROBEV, LE
    KOMISSAROV, VS
    STAFEEV, VI
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 54 (01): : K61 - K64
  • [2] FARADAY-EFFECT DUE TO HOT-ELECTRONS IN N-TYPE INSB
    POTAPOV, VT
    SOKOLOVSKII, AV
    TRIFONOV, VI
    YAREMENKO, NG
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1081 - 1083
  • [3] RECOMBINATION OF HOT-ELECTRONS AT IMPURITY CENTERS IN SEMICONDUCTORS
    ABAKUMOV, VN
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 566 - 568
  • [4] FARADAY EFFECT ON HOT ELECTRONS IN SEMICONDUCTORS
    GULYAEV, YV
    [J]. JETP LETTERS-USSR, 1965, 1 (03): : 81 - &
  • [5] HOT-ELECTRONS IN SEMICONDUCTORS
    RIDLEY, BK
    [J]. SCIENCE PROGRESS, 1986, 70 (279) : 425 - 459
  • [6] RECOMBINATION OF HOT-ELECTRONS
    VANWELZENIS, RG
    ZEEUWEN, JP
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1591 - 1595
  • [7] CYCLOTRON-RESONANCE OF HOT-ELECTRONS AND RECOMBINATION EFFECTS IN SEMICONDUCTORS
    ASRATYAN, KK
    ABULADZE, LD
    KACHLISHVILI, ZS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 642 - +
  • [8] THE ODD VOIGT EFFECT ON HOT-ELECTRONS IN SEMICONDUCTORS
    EPSHTEIN, EM
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (05): : 295 - 297
  • [9] HOT-ELECTRONS IN LAYERED SEMICONDUCTORS
    HESS, K
    HOLONYAK, N
    [J]. PHYSICS TODAY, 1980, 33 (10) : 40 - &
  • [10] HOT-ELECTRONS IN FERROMAGNETIC SEMICONDUCTORS
    KORENBLIT, IY
    TANKHILE.BG
    [J]. FIZIKA TVERDOGO TELA, 1973, 15 (11): : 3362 - 3370
12345