MEASUREMENTS OF LOCAL STRAIN VARIATION IN SI1-XGEX/SI HETEROSTRUCTURES

被引：3
|
作者：
BELL, LD
KAISER, WJ
MANION, SJ
MILLIKEN, AM
PIKE, WT
FATHAUER, RW
机构：
[1] California Inst of Technology, Pasadena
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期
关键词：
D O I：
10.1116/1.587864
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The energy splitting of the conduction-band minimum of Si1-xGex due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si1-xGex structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si1-xGex, however, heterogeneity in the strain of the Si1-xGex layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si1-xGex surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM. (C) 1995 American Vacuum Society.
引用
收藏
页码：1602 / 1607
页数：6
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