BROMINE DOPING OF CDTE AND CDMNTE EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

WAAG, A ^{[1
]}

SCHOLL, S ^{[1
]}

VONSCHIERSTEDT, K ^{[1
]}

HOMMEL, D ^{[1
]}

LANDWEHR, G ^{[1
]}

BILGER, G ^{[1
]}

机构：

[1] ZENTRUM SONNENENERGIE & WASSERSTOFF FORSCH,W-7000 STUTTGART,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 129卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90454-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the n-type doping of CdTe and CdMnTe with bromine as a novel dopant material. The thin films were grown by molecular beam epitaxy. ZnBr2 was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8 X 10(18) cm-3 could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr2 source temperatures up to 60-degrees-C - corresponding to a free carrier concentration of (2-3) X 10(18) cm-3 - the free carrier concentration of the epitaxial films increases with ZnBr2 source temperature. For higher ZnBr2 source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr2 source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed.

引用

页码：243 / 248

页数：6

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