共 18 条
- [1] IDENTIFICATION OF DISLOCATION TYPE IN THE HIGH-TEMPERATURE TREATED CRUCIBLE SILICON-CRYSTALS USING COMPUTED ELECTRON-MICROGRAPHS ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S263 - S263
- [2] SUFFICIENT CONDITIONS FOR IDENTIFICATION OF DISLOCATION BURGERS VECTORS USING COMPUTED ELECTRON-MICROGRAPHS PHILOSOPHICAL MAGAZINE, 1976, 33 (05): : 863 - 876
- [3] USE OF COMPUTED ELECTRON-MICROSCOPE IMAGES FOR ANALYSIS OF DISLOCATION CONFIGURATIONS IN SINGLE CRYSTALS OF SILICON CONTAINING OXYGEN. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (10): : 1810 - 1813
- [4] CHARACTERISTICS OF OXYGEN-CONTAINING SILICON SINGLE-CRYSTALS SUBJECTED TO LONG-TERM THERMAL TREATMENTS UKRAINSKII FIZICHESKII ZHURNAL, 1994, 39 (01): : 68 - 73
- [5] OXYGEN EFFECT ON DISLOCATION-STRUCTURE OF SILICON SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1974, 16 (01): : 269 - 271
- [6] VACANCY TYPE MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (01): : K31 - &
- [7] DEMONSTRATION OF OXYGEN IN SILICON SINGLE-CRYSTALS USING ESR PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02): : 459 - 470
- [10] THE ROLE OF OXYGEN IN THE FORMATION OF MICRODEFECTS DURING THE CRYSTALLIZATION OF SILICON DISLOCATION-FREE SINGLE-CRYSTALS KRISTALLOGRAFIYA, 1988, 33 (02): : 471 - 477