USE OF COMPUTED ELECTRON-MICROSCOPE IMAGES FOR ANALYSIS OF DISLOCATION CONFIGURATIONS IN SINGLE CRYSTALS OF SILICON CONTAINING OXYGEN.

Computational electron-microscope images are obtained for regions of polygonal dislocation half-loop extruded by a precipitate during heat treatment of silicon containing oxygen. Using the high sensitivity of the oscillating contrast of a dislocation to small changes in the diffraction conditions and achieving an agreement for the computational images with the experimental images, it was possible to refine some of the parameters of the dislocation half-loop and the thin crystal and to find others, which were not experimentally determined. The possible mechanism for the formation of a noncoplanar half-loop is considered.