ELECTRICAL TRANSPORT PROPERTIES OF HIGH-PURITY SILICON

被引：0
|
作者：
SMITH, SR
HEMENGER, PM
GREEN, BA
机构：
[1] UNIV DAYTON,RES INST,DAYTON,OH 45409
[2] USAF,MAT LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1042 / 1042
页数：1
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