DISLOCATION-DENSITY STUDIES ON EPITAXIAL GAAS ON SI SUBSTRATES

被引:0
|
作者
MIZUKI, T
SHIMIZU, M
FURUKAWA, M
SAKURAI, T
机构
来源
SHARP TECHNICAL JOURNAL | 1988年 / 40期
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:41 / 45
页数:5
相关论文
共 50 条
  • [21] Dislocation-density mechanisms for void interactions in crystalline materials
    Shanthraj, P.
    Zikry, M. A.
    INTERNATIONAL JOURNAL OF PLASTICITY, 2012, 34 : 154 - 163
  • [22] DISLOCATION-DENSITY DETERMINATION FROM EXTINCTION IN BRAGG REFLECTION
    IVANOV, AN
    SKAKOV, YA
    FOMICHEVA, EI
    INDUSTRIAL LABORATORY, 1982, 48 (09): : 893 - 896
  • [23] Epitaxial growth of GaAs on HF-treated Si substrates
    Uchida, Y
    Minemura, J
    Yazawa, Y
    Warabisako, T
    APPLIED SURFACE SCIENCE, 1996, 100 (100-101) : 478 - 481
  • [24] Threading dislocation reduction in GaAs films on thin Si substrates
    Maehashi, K
    Nakashima, H
    Bertram, F
    Veit, P
    Christen, J
    PHYSICA E, 1998, 2 (1-4): : 772 - 776
  • [25] THE GROWTH AND CHARACTERIZATION OF GE AND GAAS EPITAXIAL LAYERS ON SI SUBSTRATES
    AWAL, MA
    LEE, EH
    CHAN, EY
    SHENG, TT
    CELLER, GK
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 299 - 299
  • [26] EFFECTIVENESS OF ALGAAS/GAAS SUPERLATTICES IN REDUCING DISLOCATION DENSITY IN GAAS ON SI
    HAYAFUJI, N
    OCHI, S
    MIYASHITA, M
    TSUGAMI, M
    MUROTANI, T
    KAWAGISHI, A
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 494 - 498
  • [27] Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate
    Chang, Yung-Sheng
    Naritsuka, Shegeya
    Nishinaga, Tatau
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (05) : 629 - 634
  • [28] Dislocation-density kinematics: a simple evolution equation for dislocation density involving movement and tilting of dislocations
    A. H. W. Ngan
    MRS Communications, 2017, 7 : 583 - 590
  • [29] Dislocation-density kinematics: a simple evolution equation for dislocation density involving movement and tilting of dislocations
    Ngan, A. H. W.
    MRS COMMUNICATIONS, 2017, 7 (03) : 583 - 590
  • [30] EPD measurements for low dislocation density GaAs and InP substrates
    Inoue, T.
    Matsui, M.
    Nakamura, R.
    III-Vs Review, 12 (06): : 32 - 36