FRACTURE OF BRITTLE EPITAXIAL FILMS UNDER INFLUENCE OF MISFIT STRESS

被引：91
|
作者：
MATTHEWS, JW
KLOKHOLM, E
机构：
来源：
MATERIALS RESEARCH BULLETIN | 1972年 / 7卷 / 03期
关键词：
D O I：
10.1016/0025-5408(72)90239-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：213 / &
相关论文
共 50 条
  • [41] In-situ stress gradient evolution and texture-dependent fracture of brittle ceramic thin films under external load
    Xi, Yeting
    Bai, Yanyun
    Gao, Kewei
    Pan, Xiaolu
    Yang, Huisheng
    Yan, Luchun
    Volinsky, Alex A.
    [J]. CERAMICS INTERNATIONAL, 2018, 44 (07) : 8176 - 8183
  • [42] INFLUENCE OF ENVIRONMENT ON BRITTLE FRACTURE OF SILICA
    HAMMOND, ML
    RAVITZ, SF
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (07) : 329 - 332
  • [43] FRACTURE OF BRITTLE BODIES UNDER COMPRESSION
    MOSOLOV, AB
    BORODICH, FM
    [J]. DOKLADY AKADEMII NAUK, 1992, 324 (03) : 546 - 549
  • [44] INFLUENCE OF INHOMOGENITIES IN MATTER ON BRITTLE FRACTURE
    PETER, K
    [J]. ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1968, 25 (05): : 309 - +
  • [45] Brittle fracture under biaxial loading
    Radhakrishnan, VM
    [J]. TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 2000, 53 (1-2): : 79 - 85
  • [46] THE INFLUENCE OF THE SUBSTRATE THICKNESS ON THE FORMATION OF MISFIT DISLOCATIONS IN EPITAXIAL STRUCTURES
    PROKHOROV, IA
    ZAKHAROV, BG
    [J]. KRISTALLOGRAFIYA, 1982, 27 (02): : 354 - 357
  • [47] Measurement of fracture strength in brittle thin films
    Borrero-Lopez, Oscar
    Hoffman, Mark
    [J]. SURFACE & COATINGS TECHNOLOGY, 2014, 254 : 1 - 10
  • [48] Misfit strain phase diagrams of epitaxial PMN-PT films
    Khakpash, N.
    Khassaf, H.
    Rossetti, G. A., Jr.
    Alpay, S. P.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (08)
  • [49] The energetics of the relaxation of misfit strain in thin epitaxial films by means of twinning
    Dynna, M
    Marty, A
    [J]. ACTA MATERIALIA, 1998, 46 (04) : 1087 - 1101
  • [50] Long-range stresses generated by misfit dislocations in epitaxial films
    Trukhanov E.M.
    Kolesnikov A.V.
    Loshkarev I.D.
    [J]. Russian Microelectronics, 2015, 44 (8) : 552 - 558
12345