NUCLEATION OF VOIDS AND OTHER IRRADIATION-PRODUCED DEFECT AGGREGATES

被引：15
|
作者：
WIEDERSICH, H
KATZ, JL
机构：
[1] CLARKSON COLL TECHNOL, DEPT CHEM ENGN, POTSDAM, NY 13676 USA
[2] CLARKSON COLL TECHNOL, INST COLLOID & SURFACE SCI, POTSDAM, NY 13676 USA
来源：
ADVANCES IN COLLOID AND INTERFACE SCIENCE | 1979年 / 10卷 / JAN期
关键词：
D O I：
10.1016/0001-8686(79)87003-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：33 / 71
页数：39
相关论文
共 50 条
  • [41] ELECTRON-IRRADIATION-INDUCED CRYSTALLINE TO AMORPHOUS TRANSITION IN BETA-SIC SINGLE-CRYSTALS AND CRYSTALLIZATION OF IRRADIATION-PRODUCED AMORPHOUS SIC
    SAKATA, T
    MORI, H
    FUJITA, H
    SUZUKI, A
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1990, 54 (09) : 955 - 961
  • [42] Atomic-scale computer simulation study of the interaction of Cu-rich precipitates with irradiation-produced defects in α-Fe
    Arokiam, A. C.
    Barashev, A. V.
    Bacon, D. J.
    Osetsky, Y. N.
    PHILOSOPHICAL MAGAZINE, 2007, 87 (06) : 925 - 943
  • [43] Damage rate dependence of defect cluster nucleation in tungsten during irradiation
    Yamamoto, Y.
    Yoshimatsu, J.
    Morishita, K.
    JOURNAL OF NUCLEAR MATERIALS, 2013, 442 (1-3) : S773 - S775
  • [44] VOIDS PRODUCED IN MILD-STEEL I-MEV ELECTRON-IRRADIATION
    LITTLE, EA
    INDIAN JOURNAL OF TECHNOLOGY, 1973, 11 (10): : 439 - 441
  • [45] THE EFFECT OF IMPURITIES ON THE ORDERING OF IRRADIATION DEFECT AGGREGATES IN CAF2 CRYSTALS
    NISTOR, LC
    NISTOR, SV
    TEODORESCU, V
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 58 (02): : 675 - 678
  • [46] Nucleation and growth process of defect clusters in copper during helium ion irradiation
    Yasuda, K
    Kinoshita, C
    Kutsuwada, M
    Hirai, T
    JOURNAL OF NUCLEAR MATERIALS, 1996, 233 : 1051 - 1056
  • [47] FORM OF DEFECT CLUSTERS PRODUCED IN COPPER BY CU+ ION IRRADIATION
    WILSON, MM
    HIRSCH, PB
    PHILOSOPHICAL MAGAZINE, 1972, 25 (04): : 983 - &
  • [48] Monte-Carlo simulation of defect-cluster nucleation in metals during irradiation
    Nakasuji, Toshiki
    Morishita, Kazunori
    Ruan, Xiaoyong
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 393 : 110 - 113
  • [49] TSC DEFECT LEVEL IN SILICON PRODUCED BY IRRADIATION WITH MUONS OF GEV-ENERGY
    HEIJNE, HM
    MULLER, JC
    SIFFERT, P
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 25 - 26
  • [50] Antisite defect centers in 3C-SiC produced by ion irradiation
    Nakagawa, S. T.
    Okamoto, A.
    Betz, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13): : 2711 - 2714
12345