CALCULATED DEFECT STATES IN SEMICONDUCTOR SUPERLATTICES WITHIN A TIGHT-BINDING MODEL

被引：18
|
作者：
SURIS, RA
LAVALLARD, P
机构：
[1] UNIV PARIS 07,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE
[2] UNIV PARIS 06,F-75251 PARIS 05,FRANCE
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.50.8875
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The localized states which appear in a superlattice as a result of thickness variations of barriers or quantum wells are calculated in the framework of the tight-binding approximation. We obtain very simple formulas in terms of single-quantum-well parameters. There is always a localized state for an enlarged or narrowed quantum well. Two localized states exist in the case of decreased barrier thickness. The range of validity of the formulas is discussed as a function of the superlattice period.
引用
收藏
页码：8875 / 8877
页数：3
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