GROWTH OF DIAMOND CRYSTALS BY COMBUSTION SYNTHESIS

被引:8
|
作者
KOMANDURI, R
SNAIL, KS
FEHRENBACHER, LL
机构
[1] USN,RES LAB,DIV OPTICAT SCI,WASHINGTON,DC 20375
[2] TA & T INC,ANNAPOLIS,MD
关键词
D O I
10.1080/09500839008215136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-pressure synthesis of diamond by activated chemical vapour deposition processes is attractive for producing diamond films for optical and electronic (i.e. non-abrasive) applications because of the ability of these processes to produce these films in large dimensions. The low growth rate (about 1 µm h-1) has, however, precluded these processes for abrasive grain production on simple economic grounds. With the introduction of combustion synthesis of diamond at growth rates exceeding 100 µm h-1this barrier seems less formidable than it once did. The synthesis of large (about 200 µm) well formed single crystals of diamond by the combustion process with growth rates of about 100 µm h-1reported here, offers an opportunity to explore the potential of this process for abrasive grain production. © 1991 Taylor & Francis Group, LLC.
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收藏
页码:283 / 290
页数:8
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