共 50 条
- [43] DISTRIBUTION OF GAAS IN EPITAXIAL LAYERS GAXIN1-XAS GROWING ON SUBSTRATES FROM INPH IN A TEMPERATURE-GRADIENT FIELD [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (12): : 89 - 91
- [44] PHOTOLUMINESCENCE IN STRAINED INGAAS/GAAS SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2079 - 2082
- [45] RAMAN-STUDY OF GAAS-INXAL1-XAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4342 - 4345
- [46] EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 181 - 185
- [50] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3789 - 3794