PHOTO-LUMINESCENCE INVESTIGATION OF BAND AROUND 1.41 EV IN HEATED N-GAAS SAMPLES

被引：18

|

作者：

RAO, EVK

DUHAMEL, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 06期

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D O I：

10.1063/1.325254

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3458 / 3463

页数：6

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[41] PHOTO-LUMINESCENCE OF GAAS1-XPX-N WITH 0.67 LESS-THAN-OR-EQUAL-TO X LESS-THAN 1 AT VARIOUS EXCITATION-LEVELS AND N DOPING
STEGMANN, R
NURTDINOV, NR
YUNOVICH, AE
OELGART, G
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (01): : K49 - K52
[42] INFLUENCE OF THE NITROGEN DOPANT CONCENTRATION AND OF THE RATE OF EXCITATION ON THE PHOTO-LUMINESCENCE OF GAAS1-XPX-N IN THE COMPOSITION RANGE X-GREATER-THAN-OR-EQUAL-TO 0.67
MUNIR, M
NURTDINOV, NR
STEGMANN, R
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 721 - 724
[43] Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hνm=1.01 eV in n-type GaAs
K. D. Glinchuk
A. V. Prokhorovich
Semiconductors, 1997, 31 : 1006 - 1007
[44] PHOTO-LUMINESCENCE IN NITROGEN-DOPED GALLIUM-ARSENIDE PHOSPHIDE (GAAS1-XPX-N) FOR 0.6 LESS-THAN X LESS-THAN 1
ROESSLER, DM
SWETS, DE
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 804 - 808
[45] Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at h nu(m)=1.01 eV in n-type GaAs
Glinchuk, KD
Prokhorovich, AV
SEMICONDUCTORS, 1997, 31 (10) : 1006 - 1007

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