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- [2] MODEL FOR DEGRADATION OF BAND-GAP PHOTO-LUMINESCENCE IN GAAS NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1989, 11 (04): : 583 - 613
- [3] INFLUENCE OF UNIAXIAL PRESSURE ON THE IMPURITY PHOTO-LUMINESCENCE BAND OF GAAS-CU WITH A MAXIMUM NEAR 1.02 EV SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 258 - 260
- [5] PHOTO-LUMINESCENCE SPECTRA OF N-TYPE GAAS-SN CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01): : K17 - K21
- [7] Thermal transport of charge and polarization of 1.2-eV luminescence broad band in uniaxially strained n-GaAs:Te Semiconductors, 2003, 37 : 271 - 275
- [9] PHOTO-LUMINESCENCE EXCITATION OF THE 1.441-EV CATION ANTISITE EMISSION IN P-TYPE GAAS PHYSICAL REVIEW B, 1983, 27 (12): : 7779 - 7781
- [10] STUDY OF 0.8 EV DEEP LEVEL PHOTO-LUMINESCENCE IN UNDOPED LEC SEMI-INSULATING GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L541 - L543