Structural and optical properties of gallium sulfide thin film

被引:9
|
作者
Ertap, Huseyin [1 ]
Baydar, Tarik [2 ]
Yuksek, Mustafa [3 ]
Karabulut, Mevlut [1 ]
机构
[1] Kafkas Univ, Fac Sci & Letters, Dept Phys, Kars, Turkey
[2] Ibrahim Cecen Univ Agri, Fac Nat Sci & Engn, Dept Mat Sci & Engn, Agri, Turkey
[3] Kafkas Univ, Dept Elect Elect Engn, Fac Engn & Architecture, Kars, Turkey
来源
TURKISH JOURNAL OF PHYSICS | 2016年 / 40卷 / 03期
关键词
Gallium sulfide; chemical bath deposition technique; XRD; SEM; AFM;
D O I
10.3906/fiz-1604-14
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques. The XRD spectrum indicated that the gallium sulfide film grew in crystalline form and the phase was identified as GaS. Gallium sulfide film had an island-like structure with a random distribution on a glass substrate. The particle size of the crystallites and surface roughness of the film were found to be 28-48 nm and 11.84 nm, respectively. The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.
引用
收藏
页码:297 / 303
页数:7
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