共 50 条
- [42] REMANENT IMPURITY PHOTOCONDUCTIVITY SPECTRA OF SILICON SINGLE CRYSTALS SOVIET PHYSICS-SOLID STATE, 1963, 4 (12): : 2616 - 2617
- [44] Correlation between photoluminescence lifetime and interface trap density in silicon-on-insulator wafers Tajima, M. (tajima@pub.isas.ac.jp), 1600, Japan Society of Applied Physics (42):
- [46] CORRELATION BETWEEN PHOTOLUMINESCENCE AND DENSITY OF ELECTRONIC STATES IN LASER-DEPOSITED POROUS SILICON PHYSICAL REVIEW B, 1995, 51 (20): : 14774 - 14777
- [47] Correlation between photoluminescence and structure in silicon nanowires fabricated by metal-assisted etching PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (04): : 848 - 855
- [48] Correlation between photoluminescence lifetime and interface trap density in silicon-on-insulator wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B): : L429 - L431
- [50] Photoluminescence spectra and impurity incorporation in an SAG-ELO GaN by MOVPE PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 308 - 311