A COMPARISON OF TI FILMS SPUTTERED IN AN N-2 AR PLASMA AT 25-DEGREES-C AND 500-DEGREES-C

A single-wafer, multichamber integrated processing tool is used to reactively sputter thin films of TiN1.0 at 25 and 500-degrees-C. In-situ X-ray photoelectron spectroscopy verifies the stoichiometry and that the films are not contaminated with O (< 0.5 at%). X-ray diffraction demonstrates a discontinuity as hcp Ti is transformed into fcc TiN. At 25-degrees-C, the TiN films have a <111> orientation, while those at 500-degrees-C have a mixed <111> and <200> orientation. Films prepared at 500-degrees-C have a two-times lower resistivity than those prepared at 25-degrees-C for an equivalent film thickness. The deposition kinetics are shown to be consistent with an equilibrium phase diagram at temperatures in excess of 1050-degrees-C, despite the fact that it is non-equilibrium process.