COMPUTING TOPOLOGICAL INDICES OF 2-DIMENSIONAL SILICON-CARBONS

被引：0

作者：

Naeem, Muhammad ^{[1
]}

Siddiqui, Muhammad Kamran ^{[2
]}

Qaisar, Shahid ^{[2
]}

Imran, Muhammad ^{[3
,4
]}

Farahani, Muhammad Reza ^{[5
]}

机构：

[1] Univ Lahore, Dept Math, Pakpattan Campus, Pakpattan, Pakistan

[2] COMSATS Univ Islamabad, Dept Math, Sahiwal Campus, Sahiwal, Pakistan

[3] United Arab Emirates Univ, Dept Math Sci, Al Ain, U Arab Emirates

[4] NUST, SNS, Dept Math, Sect H-12, Islamabad, Pakistan

[5] IUST, Dept Appl Math, Tehran 16844, Iran

来源：

UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES B-CHEMISTRY AND MATERIALS SCIENCE | 2018年 / 80卷 / 04期

关键词：

Topological Indices; (2D) silicon-carbon Si2C3-III and SiC3-III; ABC; GAindex; General Randlc index; ABC(4); GA(5);

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The applications of graph theory in chemistry and in the study of molecule structures are important, and lately, it has increased exponentially. Molecular graphs have points (vertices) representing atoms (regardless of type) and lines (edges) that represents chemical bonds (regardless of type) between atoms. In this article, we study the molecular graph of (2D) silicon,carbon Si2C3-III and SiC3-III. Moreover, we have computed and gave close formulas of degree based additive topological indices mainly first and second Zagreb index, general Randic, atom bond connectivity index(ABC), geometric arithmetic index(GA), fourth atom bond connectivity and fifth GAindex of Si2C3-III and SiC3-III.

引用

页码：115 / 136

页数：22

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