VERTICALLY INTEGRATED SILICON-ON-INSULATOR WAVE-GUIDES

被引：35
|
作者：
SOREF, RA
CORTESI, E
NAMAVAR, F
FRIEDMAN, L
机构：
[1] SPIRE CORP, BEDFORD, MA 01730 USA
[2] WORCESTER POLYTECH INST, DEPT ELECT ENGN, WORCESTER, MA 01609 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 01期
关键词：
D O I：
10.1109/68.68036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new SiO2-Si-SiO2-Si-SiO2-Si structure produced by the SIMOX process is used for dual, vertically integrated waveguiding in silicon at lambda = 1.3-mu-m. Independent waveguiding is observed when 2-mu-m-thick Si cores are separated by 0.36-mu-m-thick SiO2. Coupled waveguiding is found for an 0.12-mu-m intercore oxide thickness.
引用
收藏
页码：22 / 24
页数：3
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