Luminescence and scintillation properties of In2Si2O7

被引：0
|
作者：
Garcia, A
Gaewdang, T
Chaminade, JP
Fouassier, C
Varrel, B
Jacquier, B
Messous, M
Chambon, B
Drain, D
机构：
[1] UNIV LYON 1, URA 442 CNRS, LAB PHYS CHIM MAT LUMINESCENTS, F-69622 VILLEURBANNE, FRANCE
[2] UNIV LYON 1, INST PHYS NUCL, F-69622 VILLEURBANNE, FRANCE
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 135卷 / 1-4期
关键词：
indium disilicate; crystal growth; Ce3+ luminescence; scintillation;
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
We report the physical properties of a new fast indium-based scintillator. The technique of elaboration and the crystal structure of indium disilicate (In2Si2O7) are presented as well as the analysis of an intense ultraviolet photoluminescence at low temperature. A complex fast fluorescence decay is recorded with two time domains separated by more than one order of magnitude. Scintillation was measured showing a rather good quantum efficiency comparable to Bi4Ge3O12.
引用
收藏
页码：895 / 897
页数：3
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