PREPARATION AND PROPERTIES OF PBTIO3 AND PB(SC0.5TA0.5)O3 THIN-FILMS BY SOL-GEL PROCESSING

Crack-free and dense PbTiO3 films 1-2-mu-m thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800-degrees-C. The electrical properties of the films were studied as a function of temperature, frequency and dc bias. Also, crack-free films of Pb(Sc0.5Ta0.5)O3 with an average grain size of 0.4-mu-m were prepared using a novel two-stage process. Films 4-mu-m thick had moderately high relative permittivities, low dissipation factors and high resistivity.