TRANSPORT-PROPERTIES OF N-TYPE ZNSE CRYSTALS WITH RADIATION DEFECTS

Characteristics of the temperature dependences of the Hall coefficient, electrical conductivity, and Hall mobility of carriers in n-type ZnSe crystals, irradiated with 1.3-MeV electrons, were investigated under equilibrium and nonequilibrium conditions between 77 and 300 K. The electron radiation dose was varied between 2.7 x 10(16) and 5.2 x 10(17) cm-2. The observed characteristics of the transport properties of the irradiated crystals were explained using a model of an inhomogeneous semiconductor representing-in the case of small and intermediate radiation dose-a low resistivity matrix with high-resistivity cluster inclusions. An increase in the dose enhanced the overlap of the space charge regions surrounding the high-resistivity inclusions and at a dose of 3 x 10(17) cm-2 the model changed over to one with a random potential relief.