OBSERVATION OF WANNIER-STARK LADDERS IN GAINAS-ALGAINAS SEMICONDUCTOR SUPERLATTICES

被引:5
|
作者
WANG, G
TRONC, P
DEPEYROT, J
HARMAND, JC
PALMIER, JF
KOCHERESHKO, VP
机构
[1] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
[2] CTR NATL ETUD TELECOMMUN, F-92220 BAGNEUX, FRANCE
关键词
D O I
10.1006/spmi.1994.1143
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We studied some GaInAs-AlGaInAs semiconductor superlattices grown by molecular beam epitaxy and lattice matched to InP substrates. We performed photocurrent and photocurrent-voltage under monochromatic illumination at different energies measurements. The spectra recorded at 80 K exhibit three Wannier-Stark ladders. We identified them as corresponding to the 1s ground state of respectively the heavy- and light-hole exciton and to the 2s excited state of the heavy-hole exciton. Using the 1s-2s splitting energy, the binding energy of the heavy-hole exciton ground state can therefore be accurately evaluated.
引用
收藏
页码:321 / 326
页数:6
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