LPE GROWTH OF CD-DOPED INP

被引：16

作者：

UMEBU, I ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT RADIOCHEM,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90077-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：292 / 296

页数：5

共 50 条

[1] EPITAXIAL-GROWTH OF CD-DOPED INP FROM THE VAPOR
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3247 - 3251
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 611 - 629
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[J]. MATERIALS RESEARCH BULLETIN, 1984, 19 (02) : 201 - 208
[5] LPE growth calculation of heavy doped GaInAsP / InP
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[8] DOPING AND ELECTRICAL-PROPERTIES OF CD-DOPED CRYSTALS AND LPE LAYERS OF PB1-XSNXTE
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[9] LPE GROWTH OF INGAAS/INP AND ALGAINAS/INP STRUCTURES
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[10] LPE GROWTH OF INP AND RELATED ALLOYS
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