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GROWTH AND CHARACTERIZATIONS OF CD-DOPED INSE FILMS

被引：11
|
作者：
BENRAMDANE, N [1 ]
GUESDON, JP [1 ]
JULIEN, C [1 ]
机构：
[1] UNIV PARIS 06, CNRS, PHYS SOLIDES LAB, F-75252 PARIS 05, FRANCE
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1994年 / 146卷 / 02期
关键词：
D O I：
10.1002/pssa.2211460213
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conditions for the growth of Cd-doped InSe films are developed using the flash evaporation technique. Identifications of these films are carried out using X-ray photoelectron spectroscopy and X-ray diffraction measurements. Optical absorption and photoresponse are investigated in the vicinity of fundamental transitions. Electrical properties of InSeCd0.01 thin films are reported and the conduction mechanism of polycrystalline films is investigated.
引用
收藏
页码：675 / 683
页数：9
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