TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS OF AMORPHOUS-SEMICONDUCTORS BY SUBNANOSECOND NITROGEN LASERS

被引：0

|

作者：

LUE, JT ^{[1
]}

TZENG, CC ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1986年 / 35卷 / 03期

关键词：

D O I：

10.1109/TIM.1986.6499224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：354 / 357

页数：4

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