OPTICAL BAND-GAP SHRINKAGE IN HIGHLY TRANSPARENT AND CONDUCTING ZNO THIN-FILMS DEPOSITED BY THE PYROSOL PROCESS

被引：20

作者：

TIBURCIOSILVER, A ^{[1
]}

JOUBERT, JC ^{[1
]}

LABEAU, M ^{[1
]}

机构：

[1] INPG, ENSPG, MAT & GENIE PHYS LAB, CNRS, URA 1109, F-38402 ST MARTIN DHERES, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.357665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An optical band-gap shrinkage was found in highly transparent and conducting thin films deposited by the Pyrosol Process. The narrowing appears at carrier concentrations which are consistent with a metal-semiconductor transition. The gap-shrinkage dependence on carrier concentration is consistent with the model proposed by P E. Schmid [Phys. Rev. B 23, 5531 (1981)] for Si:As and Si:B.

引用

页码：1992 / 1994

页数：3

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