Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers

被引：0
|
作者：
Hadjaj, F. [1 ]
Belghachi, A. [1 ]
Helmaoui, A. [1 ]
机构：
[1] Univ Bechar, Lab Semicond Devices Phys LPDS, POB 417, Bechar 08000, Algeria
来源：
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS | 2018年 / 11卷 / 01期
关键词：
Confinement factor; optical gain; polarization; quantum well laser;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we investigate the optical gain seen by the polarization modes for each of Transverse Electric (TE) and Transverse Magnetic(TM) of GaAs/Al0.32Ga0.68As quantum-well lasers. The factor confinement and modal gain of proposed structure also have been simulated. Comparison between the two structures (single and multiple quantum) were conducted in the effort to evaluate and understand their behavior. Results show that the optical gain offers a better value in TE mode than in TM mode. As a result of being on higher standard and having a better performance in both cases thus this study conclude that the multiple quantum well structures are a better designed choice compared to single quantum well structure.
引用
收藏
页码：61 / 70
页数：10
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