W-BAND MONOLITHIC PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HEMT CBCPW LNA

被引：0
|
作者：
TON, TN
WANG, H
CHEN, S
TAN, KL
DOW, GS
ALLEN, BR
BERENZ, J
机构：
[1] TRW, Electronic Technology Division, CA 90278, One Space Park, Redondo Beach
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 20期
关键词：
HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; MMIC;
D O I：
10.1049/el:19931200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a W-band monolithic two-stage conductor-backed coplanar waveguide (CBCPW) low-noise amplifier using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices. The amplifier exhibits a noise figure of 4.2-4.8dB with an associated gain of 12dB from 92 to 96GHz. The circuit was tested using a W-band on-wafer noise figure measurement system. The result is encouraging and shows promise for future MMIC implementation using the CBCPW structure.
引用
收藏
页码：1804 / 1805
页数：2
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