IN-SITU OPTICAL PROPERTIES OF AMORPHOUS GE FILMS DEPOSITED AT 4.2K

被引：0
|
作者：
BAHL, SK [1 ]
BLUZER, N [1 ]
GLOVER, RE [1 ]
机构：
[1] UNIV MARYLAND,COLLEGE PARK,MD
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1973年 / 18卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：132 / 132
页数：1
相关论文
共 50 条
  • [31] ELECTRICAL AND OPTICAL-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS HYDROCARBON FILMS
    ROHWER, K
    HAMMER, P
    THIELE, JU
    GISSLER, W
    BLAUDECK, P
    FRAUENHEIM, T
    MEISSNER, D
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 843 - 846
  • [32] Thickness dependence of the optical properties of amorphous As-Ge-S thin films
    Todorov, R.
    Lalova, A.
    Tasseva, J.
    [J]. BULGARIAN CHEMICAL COMMUNICATIONS, 2013, 45 : 38 - 42
  • [33] Optical properties and thermal stability of amorphous Ge-Sb-Se films
    Teng, Nana
    Qin, Jingshuang
    Chen, Yimin
    Wang, Rongping
    Shen, Xiang
    Xu, Tiefeng
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2020, 532 (532)
  • [34] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS
    BRODSKY, MH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 125 - &
  • [35] RELATIONS BETWEEN STRUCTURE AND THE OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS
    BRODSKY MH
    [J]. 1971, 8 (01): : 125 - 134
  • [36] Optical properties of amorphous As-Se and Ge-As-Se thin films
    Tichy, L
    Tichá, H
    Nagels, P
    Callaerts, R
    Mertens, R
    Vlcek, M
    [J]. MATERIALS LETTERS, 1999, 39 (02) : 122 - 128
  • [37] TRANSPORT AND OPTICAL PROPERTIES OF AMORPHOUS GE-TE-SE ALLOY FILMS
    ROCKSTAD, HK
    FLASCK, R
    DENEUFVI.JP
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 454 - 454
  • [38] Effect of In incorporation on optical properties of amorphous Se-Ge thin films
    Pandey, V.
    Tripathi, S. K.
    Kumar, A.
    [J]. PHYSICA B-CONDENSED MATTER, 2007, 388 (1-2) : 200 - 205
  • [39] ON THE EQUILIBRIUM IN THE SYSTEM - FREE-CARRIERS - FREE EXCITONS-ELECTRON-HOLE DROPES IN GE AT 4.2K
    MANENKOV, AA
    MILIAEV, VA
    SANINA, VA
    [J]. DOKLADY AKADEMII NAUK SSSR, 1980, 250 (06): : 1371 - 1374
  • [40] PROPERTIES OF THIN FILMS OF PBTE AND SNTE DEPOSITED AT TEMPERATURES BETWEEN 4.2 DEGREES AND 300 DEGREES K
    BROWN, RW
    MILLNER, AR
    ALLGAIER, RS
    [J]. THIN SOLID FILMS, 1970, 5 (03) : 157 - &
12345