PLASMA-ACTIVATED SINTERING OF ALUMINUM NITRIDE

被引：23

作者：

HENSLEY, JE ^{[1
]}

RISBUD, SH ^{[1
]}

GROZA, JR ^{[1
]}

YAMAZAKI, K ^{[1
]}

机构：

[1] UNIV CALIF DAVIS,DEPT MECH AERONAUT & MAT ENGN,DAVIS,CA 95616

来源：

JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE | 1993年 / 2卷 / 05期

关键词：

AIN; DENSIFICATION; DENSITY; GRAIN STRUCTURE; INTERGRANULAR PHASES; PLASMA; POWDER CONSOLIDATION; SINTERING; THERMAL CONDUCTIVITY;

D O I：

10.1007/BF02650055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of a new Plasma-activated sintering (PAS) process to densify aluminum nitride (AlN) powders to nearly full theoretical density (97 to >99%) in 5 to 10 min was investigated. The process consists of a pulse activation step, followed by sintering at 1730 to 1800-degrees-C using resistance heating in carbon dies. Submicron size (approximately 0.44 mum) AlN powders of low oxygen content (<1 wt%) were consolidated to near full density in both air and vacuum with no sintering aids or binders. Transmission electron microscopy (TEM) examination revealed an equiaxed, submicron grain structure (approximately 0.77 mum) with no apparent pores or intergranular phases. X-ray powder diffraction revealed no secondary crystalline phases.

引用

页码：665 / 670

页数：6

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