PARAMETERS OF EXCITONS BOUND TO NEUTRAL ATOMS OF NITROGEN IN SIC(6H)

被引:0
|
作者
KROKHMAL, AP
机构
来源
UKRAINSKII FIZICHESKII ZHURNAL | 1981年 / 26卷 / 03期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:418 / 421
页数:4
相关论文
共 50 条
  • [41] ACCEPTOR AND DONOR NEUTRALIZATION BY HYDROGEN IN 6H SIC
    CLERJAUD, B
    GENDRON, F
    PORTE, C
    WILKENING, W
    SOLID STATE COMMUNICATIONS, 1995, 93 (05) : 463 - 464
  • [42] IMPURITY ABSORPTION OF INFRARED RADIATION IN SIC(6H)
    VAKULENKO, OV
    SHUTOV, BM
    GOVOROVA, OA
    FIZIKA TVERDOGO TELA, 1972, 14 (01): : 291 - +
  • [43] DISPLACEMENT PHENOMENA OF BORON ACCEPTORS IN 6H SIC
    HARDEMAN, GE
    GERRITSE.GB
    PHYSICS LETTERS, 1966, 20 (06): : 623 - &
  • [44] Writing cobalt FIB implantation into 6H:SiC
    Bischoff, L
    Teichert, J
    APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 336 - 339
  • [45] COHERENT OVERLAPPING LACBED PATTERNS IN 6H SIC
    VINCENT, R
    VINE, WJ
    MIDGLEY, PA
    SPELLWARD, P
    STEEDS, JW
    ULTRAMICROSCOPY, 1993, 50 (03) : 365 - 376
  • [46] Junction barrier Schottky diodes in 6H SiC
    Zetterling, CM
    Dahlquist, F
    Lundberg, N
    Ostling, M
    Rottner, K
    Ramberg, L
    SOLID-STATE ELECTRONICS, 1998, 42 (09) : 1757 - 1759
  • [47] Structural study of Lely grown 6H SiC
    Tuominen, M
    Prieur, E
    Yakimova, R
    Glass, RC
    Tuomi, T
    Janzen, E
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 409 - 412
  • [48] LUMINESCENCE ENHANCEMENT BY ELECTROCHEMICAL ETCHING OF SIC(6H)
    PETROVAKOCH, V
    SRESELI, O
    POLISSKI, G
    KOVALEV, D
    MUSCHIK, T
    KOCH, F
    THIN SOLID FILMS, 1995, 255 (1-2) : 107 - 110
  • [49] REFINEMENT OF CRYSTAL STRUCTURE OF SIC TYPE 6H
    DEMESQUITA, AH
    ACTA CRYSTALLOGRAPHICA, 1967, 23 : 610 - +
  • [50] STRUCTURE OF RESTSTRAHLEN BAND OF SIC(6H) CRYSTALS
    ILIN, MA
    RASHEVSK.EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (08): : 1454 - &