NOVEL PHOTOVOLTAIC DELTA-DOPED GAAS SUPERLATTICE STRUCTURE

被引:13
|
作者
GLASS, AM [1 ]
SCHUBERT, EF [1 ]
WILSON, BA [1 ]
BONNER, CE [1 ]
CUNNINGHAM, JE [1 ]
OLSON, DH [1 ]
JAN, W [1 ]
机构
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词
D O I
10.1063/1.101138
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2247 / 2249
页数:3
相关论文
共 50 条
  • [41] FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS
    HSU, TM
    TIEN, YC
    LU, NH
    TSAI, SP
    LIU, DG
    LEE, CP
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1065 - 1069
  • [42] DELTA-DOPED OHMIC CONTACTS TO N-GAAS
    SCHUBERT, EF
    CUNNINGHAM, JE
    TSANG, WT
    CHIU, TH
    APPLIED PHYSICS LETTERS, 1986, 49 (05) : 292 - 294
  • [43] QUANTUM TRANSPORT IN DELTA-DOPED GAAS-LAYERS
    GUSEV, GM
    KVON, ZD
    LUBYSHEV, DI
    MIGAL, VP
    POGOSOV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (04): : 364 - 367
  • [44] NEGATIVE LONGITUDINAL MAGNETORESISTANCE OF DELTA-DOPED LAYERS IN GAAS
    BUDANTSEV, MV
    KVON, ZD
    POGOSOV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (09): : 879 - 881
  • [45] DC and AC characteristics of delta-doped GaAs FET
    Hong, Won-Pyo
    Harbison, J.
    Florez, L.
    Abeles, Joseph H.
    Electron device letters, 1989, 10 (07): : 310 - 312
  • [46] DELTA-DOPED GAAS GROWN BY CHLORIDE-CVD
    IMAIZUMI, T
    SEIWA, M
    ODA, O
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 443 - 447
  • [47] ELECTRON-MOBILITY IN SI DELTA-DOPED GAAS
    KOENRAAD, PM
    VANDESTADT, AFW
    SHI, JM
    HAI, GQ
    STUDART, N
    VANSANT, P
    PEETERS, FM
    DEVREESE, JT
    PERENBOOM, JAAJ
    WOLTER, JH
    PHYSICA B, 1995, 211 (1-4): : 462 - 465
  • [48] EXPERIMENTAL AND THEORETICAL MOBILITY OF ELECTRONS IN DELTA-DOPED GAAS
    GILLMAN, G
    VINTER, B
    BARBIER, E
    TARDELLA, A
    APPLIED PHYSICS LETTERS, 1988, 52 (12) : 972 - 974
  • [49] INTERBAND RESONANT TUNNELING DIODE IN DELTA-DOPED GAAS
    WANG, YH
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1546 - 1547
  • [50] PHOTOCURRENT SPECTRA OF DELTA-DOPED GAAS NIPI SUPERLATTICES
    ALPEROVICH, VL
    LUBYSHEV, DI
    MIGAL, VP
    SEMYAGIN, BR
    YAROSHEVICH, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (03): : 282 - 284