ELECTRICAL AND OPTICAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY GROWN GA-DOPED ZNSE

被引：10
|
作者：
VAZIRI, M [1 ]
REIFENBERGER, R [1 ]
GUNSHOR, RL [1 ]
KOLODZIEJSKI, LA [1 ]
VENKATESAN, S [1 ]
PIERRET, RF [1 ]
机构：
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：253 / 258
页数：6
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