THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES

被引：12

作者：

DRUIJF, KG

DENIJS, JMM

VANDERDRIFT, E

AFANAS'EV, VV

GRANNEMAN, EHA

BALK, P

机构：

[1] Delft Institute of Microelectronics and Submicrotechnology, (DIMES), Delft University of Technology, Delft, 2600 GB

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00139-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Donor-type interface states, generated by vacuum ultraviolet irradiation have been studied. They anneal at room temperature but only when in a neutral state. This anneal is accompanied by the release of atomic hydrogen. It is proposed that the states are formed by H loosely bonded to sites in the SiO2 network at or near the interface. Anneal would take place by removal of H. Capturing a hole would strengthen the bond between H and the network site.

引用

页码：206 / 210

页数：5

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