THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES

被引：12
|
作者：
DRUIJF, KG
DENIJS, JMM
VANDERDRIFT, E
AFANAS'EV, VV
GRANNEMAN, EHA
BALK, P
机构：
[1] Delft Institute of Microelectronics and Submicrotechnology, (DIMES), Delft University of Technology, Delft, 2600 GB
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00139-5
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Donor-type interface states, generated by vacuum ultraviolet irradiation have been studied. They anneal at room temperature but only when in a neutral state. This anneal is accompanied by the release of atomic hydrogen. It is proposed that the states are formed by H loosely bonded to sites in the SiO2 network at or near the interface. Anneal would take place by removal of H. Capturing a hole would strengthen the bond between H and the network site.
引用
收藏
页码：206 / 210
页数：5
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