EFFECT OF ILLUMINATION UNIFORMITY ON GAAS PHOTOCONDUCTIVE SWITCHES

被引：3
|
作者：
DONALDSON, WR
MU, LY
机构：
[1] Laboratory for Laser Energetics, University of Rochester, Rochester
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 12期
关键词：
D O I：
10.1109/3.362723
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with our electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density, Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure, The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency.
引用
收藏
页码：2866 / 2874
页数：9
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