PRECIPITATION IN SILICON CAUSED BY ELECTRON RADIATION DAMAGE DURING HVEM

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作者：

NES, E

WASHBURN, J

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JERNKONTORETS ANNALER | 1971年 / 155卷 / 08期

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中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

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页码：527 / &

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